Peer-reviewed journal publications and conference presentations

Bruce Vojak has authored or co-authored 70 peer-reviewed journal publications and 48 conference presentations.

His research career consisted of two distinct phases, a twenty-five-year stream (1977 to 2002) in the general field of physical electronics and a nearly twenty-year stream (1999 to present) in the general field of strategic technology management and breakthrough innovation.

His work in physical electronics included research on photonic, electronic and acoustic technologies at the materials, components and subsystems levels of the value chain. This stream yielded fifty-six publications in refereed journals and twenty-four conference presentations. Highlight accomplishments include the: first demonstration of the quantum-well laser, demonstration of the low temperature-dependence of threshold-current in quantum-well lasers, characterization of epitaxial crystals grown over submicrometer metal gratings for novel high-speed transistors and first demonstration of laser operation of a doping superlattice.

His work in strategic technology management and breakthrough innovation grew out of seeking to better understand tactical and strategic planning in technology management. To date this stream has yielded one book, five invited book chapters, fourteen publications in refereed journals and twenty-four conference presentations. Additionally, this work has generated significant industry interest, resulting in thirty-six keynote and seminar presentations and workshops for industry audiences.

Publications in peer-reviewed journals

  1. A. Griffin, R.L. Price, B.A. Vojak and N. Hoffman (2014). Serial Innovators’ processes: How they overcome barriers to creating radical innovations. Industrial Marketing Management (in press).
  2. B.A. Vojak, R.L. Price and A. Griffin (2012). Serial Innovators: How Individuals Create and Deliver Breakthrough Innovations in Mature Firms. Research-Technology Management 55 42.
  3. J. Hebda, B.A. Vojak, A. Griffin and R.L. Price (2012). Motivating and demotivating technical visionaries in large corporations: a comparison of perspectives. R&D Management 42 101.
  4. R.L. Price, A. Griffin, B.A. Vojak, N. Hoffmann and H. Burgon (2009). Innovation Politics: How Serial Innovators Gain Organizational Acceptance for Breakthrough New Products. International Journal of Technology Marketing 4 165.
  5. A. Griffin, R.L. Price, M.M. Maloney, B.A. Vojak and E.W. Sim (2009). Voices from the Field: How Exceptional Electronic Industrial Innovators Innovate. Journal of Product Innovation Management 26 222.
  6. M. Marvel, A. Griffin, J.M. Hebda and B.A. Vojak (2007). Examining the Technical Corporate Entrepreneurs’ Motivation: Voices from the Field. Entrepreneurship Theory and Practice 31 753.
  7. E.W. Sim, A. Griffin, R. Price, B.A. Vojak (2007). Exploring Differences between Inventors, Champions, Implementers and Serial Innovators in Developing New Products in Large, Mature Firms. Creativity and Innovation Management 16 422.
  8. J.M. Hebda, B.A. Vojak, A. Griffin and R.L. Price (2007). The Motivation of Technical Visionaries in Large American Companies. IEEE Transactions on Engineering Management 54 433.
  9. B.A. Vojak, A. Griffin, R.L. Price and K. Perlov (2006). Characteristics of Technical Visionaries as Perceived by American and British Industrial Physicists. R&D Management 36 17.
  10. B.A. Vojak and C.A. Suarez (2005). Sources of Information Used in Technology Planning in the Upstream Environment of the Electronics Industry. International Journal of Technology Intelligence and Planning 1 441.
  11. B.A. Vojak and N. Cihan (2005). Technology Planning Based on an Industry’s Cultural Propensity for Innovation. International Journal of Technology Intelligence and Planning 1 205.
  12. B.A. Vojak and C.A. Suarez (2004). Product Attribute Bullwhip in the Technology Planning Process and a Methodology to Reduce It. IEEE Transactions on Engineering Management 51 288.
  13. N.P. Ostrom, B.A. Vojak and J.G. Eden (2004). Radio-Frequency (10-23 MHz) Assisted Excitation of a Microdischarge with a Piezoelectric Transformer. Plasma Sources Science and Technology 13 278.
  14. B.A. Vojak and F.A. Chambers (2004). Roadmapping Disruptive Technical Threats and Opportunities in Complex, Technology-Based Sub-Systems: The SAILS Methodology. Technological Forecasting and Social Change 71 121.
  15. J.G. Eden, S.-J. Park, N.P. Ostrom, S.T. McCain, C.J. Wagner, B.A. Vojak, J. Chen, C. Liu, P. von Allmen, F. Zenhausern, D.L. Wilcox and J.J. Ewing (2003). Microplasma Devices Fabricated in Silicon, Ceramic, and Metal/Polymer Structures: Arrays, Emitters, and Photodetectors. Journal of Physics D: Applied Physics 36 2869.
  16. P. von Allmen, D.J. Sadler, C. Jensen, N.P. Ostrom, S.T. McCain, B.A. Vojak and J.G. Eden (2003). Linear, Segmented Microdischarge Array with an Active Length of ~1 cm: CW and Pulsed Operation in the Rare Gases and Gain on the 460.30 nm Transition of Xe+. Applied Physics Letters 82 4447.
  17. P. von Allmen, S.T. McCain, N.P. Ostrom, B.A. Vojak, J.G. Eden, F. Zenhausern, C. Jensen and M. Oliver (2003). Ceramic Microdischarge Arrays with Individually Ballasted Pixels. Applied Physics Letters 82 2562.
  18. B.A. Vojak, R.L. Price and J.V. Carnahan (2003). The Relationship between Department Rank and College Rank in Engineering Graduate Program Rankings Conducted by U.S. News and World Report. ASEE Journal of Engineering Education 92 65.
  19. B.A. Vojak, S.-J. Park, C.J. Wagner, J.G. Eden, R. Koripella, J. Burdon, F. Zenhausern and D.L. Wilcox (2001). Multistage, Monolithic Ceramic Microdischarge Device Having and Active Length of ~ 0.27 mm. Applied Physics Letters 78 1340.
  20. B.A. Vojak and N. Holonyak, Jr. (1989). Gain-Loss Model for the Dependence of the Stimulated-Emission Transition in AlxGa1-xAs-GaAs Quantum Well Heterostructures on Photoexcitation Geometry. Applied Physics Letters 54 2518.
  21. A. Kangarlu, H.R. Chandrasekhar, M. Chandrasekhar, Y.M. Kapoor, F.A. Chambers, B.A. Vojak and J.M. Meese (1988). High-Pressure Studies of GaAs-AlxGa1-xAs Quantum Wells at 300 and 80K Using Photoreflectance Spectroscopy. Physical Review B 38 9790.
  22. S.K. Sheem and B.A. Vojak (1988). Broad-Area Semiconductor Lasers with Gain-Length Variation for Lateral Mode Control: The Bow-Tie Geometry Laser. Journal of Applied Physics 63 248.
  23. A. Kangarlu, H.R. Chandrasekhar, M. Chandrasekhar, Y.M. Kapoor, F.A. Chambers, B.A. Vojak and J.M. Meese (1988). Temperature Dependence of the Quantized States in a GaAs-AlxGa1-xAs Superlattice. Physical Review B 37 1035.
  24. U. Venkateswaran, M. Chandrasekhar, H.R. Chandrasekhar, B.A. Vojak, F.A. Chambers and J.M. Meese (1987). High Pressure Study of GaAs-AlxGa1-xAs Quantum Wells at Low Temperatures. Superlattices and Microstructures 3 217.
  25. A. Kangarlu, H.R. Chandrasekhar, M. Chandrasekhar, F.A. Chambers, B.A. Vojak and J.M. Meese (1986). Photoreflectance Spectroscopy of GaAs-AlxGa1-xAs Quantum Wells under Hydrostatic Pressure. Superlattices and Microstructures 3 569.
  26. J.M. Meese, P.E. Chumbley, F.A. Chambers, B.A. Vojak and G.W. Zajac (1986). Correlation of Photoluminescence and Electrical Measurements in Identifying Contaminants in MBE-Grown GaAs. Superlattices and Microstructures 2 243.
  27. F.A. Chambers, P.E. Chumbley, J.M. Meese, B.A. Vojak, G.W. Zajac and T.H. Fleisch (1986). The Influence of Gallium Ingot Cleaning Procedures on the Carbon Impurity Level in Molecular Beam Epitaxy GaAs. Journal of Vacuum Science and Technology A 4 806.
  28. U. Venkateswaran, M. Chandrasekhar, H.R. Chandrasekhar, B.A. Vojak, F.A. Chambers and J.M. Meese (1986). High Pressure Studies of GaAs-Ga1-xAlxAs Quantum Wells of Well Widths 20 to 150 Å. Physical Review B 33 8416.
  29. B.A. Vojak, G.W. Zajac, F.A. Chambers, J.M. Meese, P.E. Chumbley, R.W. Kaliski, N. Holonyak, Jr. and D.W. Nam (1986). Photopumped Laser Operation of GaAs Doping Superlattices. Applied Physics Letters 48 251.
  30. W.D. Goodhue, T.C.L.G. Sollner, H.Q. Le, E.R. Brown and B.A. Vojak (1986). Large Room Temperature Effects from Resonant Tunneling through AlAs Barriers. Applied Physics Letters 49 1086.
  31. H.Q. Le, B. Lax, B.A. Vojak and A.R. Calawa (1985). High-Density Excitonic State in Two-Dimensional Multi-Quantum Wells. Physical Review B / Rapid Communications 32 1419.
  32. B.A. Vojak, R.W. McClelland, G.A. Lincoln, A.R. Calawa, D.C. Flanders and M.W. Geis (1984). A Self-Aligned Dual-Grating GaAs Permeable Base Transistor. IEEE Electron Device Letters EDL-5 270.
  33. D.D. Rathman, B.A. Vojak, N.P. Economou, S.M. Cabral and L.A. Stern (1984). The Effect of Base-Schottky Geometry on Si Permeable Base Transistor Device Performance/ IEEE Electron Device Letters EDL-5 191.
  34. B.A. Vojak, D.D. Rathman, J.A. Burns, S. Cabral and N.N. Efremow (1984). Structural Characterization by Transmission Electron Microscopy of Silicon Grown Over Submicrometer-Period Tungsten Gratings. Applied Physics Letters 44 223.
  35. B.A. Vojak and G.D. Alley (1983), A Comparison of Etched-Geometry and Overgrown Silicon Permeable Base Transistors by Two-Dimensional Numerical Simulations. IEEE Transactions on Electron Devices ED-30 877.
  36. B.A. Vojak, J.P. Salerno, D.C. Flanders, G.D. Alley, C.O. Bozler, K.B. Nichols, R.W. McClelland, N.P. Economou, G.A. Lincoln, R.A. Murphy, W.T. Lindley and G.D. Johnson (1983). Transmission Electron Microscopy of GaAs Permeable Base Transistor Structures Grown by Vapor Phase Epitaxy. Journal of Applied Physics 54 3554.
  37. B.A. Vojak and J.P. Salerno (1982). Transmission Electron Microscopy of GaAs Grown Over Submicrometer-Period Tungsten Gratings. Applied Physics Letters 41 1151.
  38. B.-Y. Tsaur, R.W. McClelland, J.C.C. Fan, R.P. Gale, J.P. Salerno, B.A. Vojak and C.O. Bozler (1982). Low-Dislocation-Density GaAs Epilayers Grown on Ge-Coated Si Substrates by Means of Lateral Epitaxial Overgrowth. Applied Physics Letters 41 347.
  39. G.A. Lincoln, M.W. Geis, L.J. Mahoney, A. Chu, B.A. Vojak, K.B. Nichols, W.J. Piacentini, N. Efremow and W.T. Lindley (1982). Ion Beam Assisted Etching for GaAs Device Applications. Journal of Vacuum Science and Technology 20 786.
  40. N. Holonyak, Jr., B.A. Vojak, H. Morkoç, T.J. Drummond and K. Hess (1982). Stimulated Emission in a Degenerately Doped GaAs Quantum Well. Applied Physics Letters 40 658.
  41. W.D. Laidig, N. Holonyak, Jr., M.D. Camras, B.A. Vojak, K. Hess, J.J. Coleman and P.D. Dapkus (1981). Quenching of Stimulated Phonon Emission in AlxGa1-xAs-GaAs Quantum-Well Heterostructures. Solid State Communications 38 301.
  42. E.R. Anderson, B.A. Vojak, N. Holonyak, Jr., G.E. Stillman, J.J. Coleman and P.D. Dapkus (1981). Transient and Noise Characteristics of Quantum-Well Heterostructure Lasers. Applied Physics Letters 38 585.
  43. B.A. Vojak, N. Holonyak, Jr., W.D. Laidig, K. Hess, J.J. Coleman and P.D. Dapkus (1981). Phonon Contribution to Metal Organic Chemical Vapor Deposited AlxGa1-xAs-GaAs Quantum-Well Heterostructure Laser Operation. Journal of Applied Physics 52 959.
  44. B.A. Vojak, W.D. Laidig, N. Holonyak, Jr., M.D. Camras, J.J. Coleman and P.D. Dapkus (1981). High-Energy (Visible-Red) Stimulated Emission in GaAs. Journal of Applied Physics 52 621.
  45. S.W. Kirchoefer, E.A. Rezek, B.A. Vojak, N. Holonyak, Jr., D. Finn, D.K. Keune and J.A. Rossi (1981). Continuous Room-Temperature Photo-Pumped Laser Operation of Visible-Spectrum LPE In1-xGaxP1-zAsz (λ ~ 6700 Å). IEEE Journal of Quantum Electronics QE-17 161.
  46. P.D. Dapkus, J.J. Coleman, W.D. Laidig, N. Holonyak, Jr., B.A. Vojak and K. Hess (1981). Continuous Room-Temperature Photo-Pumped Laser Operation of Modulation-Doped AlxGa1-xAs/GaAs Superlattices. Applied Physics Letters 38 118.
  47. E.A. Rezek, B.A. Vojak, R. Chin, N. Holonyak, Jr. and E.A. Sammann (1981). Thin-Layer Liquid Phase Epitaxy of InGaPAs Heterostructures in Short Intervals (< 100 ms): Non-Diffusion-Limited Crystal Growth. Journal of Electronic Materials 10 255.
  48. J. Coleman, P.D. Dapkus, W.D. Laidig, B.A. Vojak and N. Holonyak, Jr. (1981). High-Barrier Cluster-Free AlxGa1-xAs-GaAs Quantum-Well Heterostructure Laser. J, Applied Physics Letters 38 63.
  49. N. Holonyak, Jr., W.D. Laidig, B.A. Vojak, K. Hess, J.J. Coleman, P.D. Dapkus and J. Bardeen (1980). Alloy Clustering in AlxGa1-xAs-GaAs Quantum-Well Heterostructures. Physical Review Letters 45 1703.
  50. B.A. Vojak, N. Holonyak, Jr., W.D. Laidig, K. Hess, J.J. Coleman and P.D. Dapkus (1980). The Exciton in Recombination in AlxGa1-xAs-GaAs Quantum-Well Heterostructures. Solid State Communications 35 477.
  51. R. Chin, N. Holonyak, Jr. and B.A. Vojak (1980). Visible-Spectrum Multiple-Quantum-Well In1-x’Gax’P1-z’Asz’-In1-xGaxP1-zAsz (x > x’, z > z’) Heterostructure Lasers. Journal of Applied Physics 51 4017.
  52. N. Holonyak, Jr., B.A. Vojak, W.D. Laidig, K. Hess, J.J. Coleman and P.D. Dapkus (1980). Phonon Contribution to Double-Heterojunction Laser Operation. Applied Physics Letters 37 136.
  53. J.J. Coleman, P.D. Dapkus, B.A. Vojak, W.D. Laidig, N. Holonyak, Jr. and K. Hess (1980). Induced Phonon-Sideband Laser Operation of Large-Quantum-Well AlxGa1-xAs-GaAs Heterostructures (Lz ~ 100 – 500 Å). Applied Physics Letters 37 15.
  54. K. Hess, B.A. Vojak, N. Holonyak, Jr., R. Chin and P.D. Dapkus (1980). Temperature Dependence of Threshold Current for a Quantum-Well Heterostructure Laser. Solid-State Electronics 23 585.
  55. K. Hess, N. Holonyak, Jr., W.D. Laidig, B.A. Vojak, J.J. Coleman and P.D. Dapkus (1980). Hot Electron and Phonons in Quantum-Well GaAs Heterostructures. Solid State Communications 34 749.
  56. E.A. Rezek, B.A. Vojak, R. Chin and N. Holonyak, Jr. (1980). Compositional Inhomogeneity of Liquid Phase Epitaxial InGaPAs Layers Observed Directly in Photoluminescence. Applied Physics Letters 36 744.
  57. N. Holonyak, Jr., R.M. Kolbas, W.D. Laidig, B.A. Vojak, K. Hess, R.D. Dupuis and P.D. Dapkus (1980). Phonon-Assisted Recombination and Stimulated Emission in Quantum-Well AlxGa1-xAs-GaAs Heterostructures. Journal of Applied Physics 51 1328.
  58. R. Chin, N. Holonyak Jr., B.A. Vojak, K. Hess, R.D. Dupuis and P.D. Dapkus (1980). Temperature Dependence of Threshold Current for Quantum-Well AlxGa1-xAs-GaAs Heterostructure Laser Diodes. Applied Physics Letters 36 19.
  59. R.M. Kolbas, N. Holonyak, Jr., B.A. Vojak, K. Hess, M. Altarelli, R.D. Dupuis and P.D. Dapkus (1979). Phonon-Assisted Recombination and Stimulated Emission in Multiple Quantum-Well MOCVD AlxGa1‑xAs-GaAs Heterostructures (Lz ~ 50 Å, E1-1‘ – 2hωLO < hω < EL). Solid State Communications 31 1033.
  60. B.A. Vojak, N. Holonyak, Jr., R. Chin, E.A. Rezek, R.D. Dupuis and P.D. Dapkus (1979). Tunnel Injection and Phonon-Assisted Recombination in Multiple Quantum-Well AlxGa1-xAs-GaAs p-n Heterostructure Lasers Grown by Metal Organic Chemical Vapor Deposition. Journal of Applied Physics 50 5835.
  61. B.A. Vojak, S.W. Kirchoefer, N. Holonyak, Jr., R. Chin, R.D. Dupuis and P.D. Dapkus (1979). Low-Temperature Operation of Multiple Quantum-Well AlxGa1-xAs p-n Heterostructure Lasers Grown by Metal Organic Chemical Vapor Deposition. Journal of Applied Physics 50 5830.
  62. N. Holonyak, Jr., B.A. Vojak, R.M. Kolbas, R.D. Dupuis and P.D. Dapkus (1979). Bevel Cross-Sectioning of Ultra-Thin (~ 100 Å) III-V Semiconductor Layers. Solid-State Electronics 22 431.
  63. R.D. Dupuis, P.D. Dapkus, N. Holonyak, Jr., R.M. Kolbas, W.D. Laidig and B.A. Vojak (1979). Room-Temperature High-Energy Continuous Laser Operation of Metal Organic Chemical Vapor Deposited AlxGa1-xAs-GaAs Quantum-Well Heterostructures. Pis’ma Zhurnal Tekhnicheskoi Fiziki 5 132. (translated in Soviet Technical Physics Letters 5 52 (1979))
  64. E.A. Rezek, B.A. Vojak and N. Holonyak, Jr. (1978). Bandfilling in Liquid Phase Epitaxial InP-In1-xGaxP1-zAsz-InP Quantum-Well Heterostructure Lasers. Journal of Applied Physics 49 5398.
  65. N. Holonyak, Jr., R.M. Kolbas, W.D. Laidig, B.A. Vojak, R.D. Dupuis and P.D. Dapkus (1978). Low-Threshold Continuous Laser Operation (300-337K) of Multilayer MOCVD AlxGa1-xAs-GaAs Quantum-Well Heterostructures. Applied Physics Letters 33 737.
  66. E.A. Rezek, N. Holonyak, Jr., B.A. Vojak and H. Shichijo (1978). Single and Multiple Thin-Layer (Lz < 400 Å) In1-xGaxP1-zAsz-InP Heterostructure Light Emitters and Lasers (λ ~ 1.1 mm, 77K). Journal of Applied Physics 49 69.
  67. E.A. Rezek, N. Holonyak, Jr., B.A. Vojak and H. Shichijo (1977). Tunnel Injection into the Confined-Particle States of an In1-xGaxP1-zAsz Well in InP. Applied Physics Letters 31 703.
  68. E.A. Rezek, H. Shichijo, B.A. Vojak and N. Holonyak, Jr. (1977). Confined-Carrier Luminescence of a Thin In1-xGaxP1-zAsz Well (x ~ 0.13, z ~ 0.29, ~ 400 Å) in an InP p-n Junction. Applied Physics Letters 31 534.
  69. M.J. Ludowise, N. Holonyak, Jr., P.D. Wright, B.A. Vojak, E.A. Rezek, H.W. Korb (1977). Defect- and Phonon-Assisted Tunneling in LPE In1-xGaxP1-zAsz DH Laser Diodes (λ ~ 1 mm). Journal of Applied Physics 48 4287.
  70. E.A. Rezek, N. Holonyak, Jr., B.A. Vojak, G.E. Stillman, J.A. Rossi, D.L. Keune and J.D. Fairing (1977). LPE In1-xGaxP1-zAsz (x ~ 0.12, z ~ 0.26) DH Laser with Multiple Thin-Layer (< 500 Å Active Region. Applied Physics Letters 31 288.

Conference presentations

(* = plenary or keynote)

  1. R. Echambadi, J. Clark, S. Faber and B.A. Vojak (June 2014). Commercial innovations in subsistence marketplaces panel. Fifth Subsistence Marketplaces Conference. Champaign, IL.
  2. B.A. Vojak (May 2014). A Historical Perspective on the Epistemology of Breakthrough Innovation. Forum on the Philosophy of Engineering and Technology (fPET-2014). Blacksburg, VA.
  3. * B.A. Vojak (October 2013). Serial Innovators: How Individuals Create and Deliver Breakthrough Innovations in Mature Firms. American Society of Engineering Management (ASEM) Annual Meeting. Minneapolis, MN.
  4. * B.A. Vojak (July 2013). The Love of Innovation: Toward a Theology of Breakthrough Corporate Innovation. American Scientific Affiliation (ASA) Annual Meeting. Nashville, TN.
  5. * B.A. Vojak and R.L. Price (May 2012). Serial Innovators: How Individuals Create and Deliver Breakthrough Innovations in Mature Firms. Industrial Research Institute (IRI) Annual Meeting. Indian Wells, CA.
  6. B.A. Vojak, R.L. Price and A. Griffin (May 2010). On the Epistemology of Breakthrough Innovation: the Non-Linear and Orthogonal Natures of Discovery. Forum on the Philosophy of Engineering and Technology (fPET-2010). Golden, CO.
  7. B.A. Vojak, R.L. Price and A. Griffin (June 2009). The Epistemology of Breakthrough Innovation. R&D Management Conference. Vienna, Austria.
  8. B.A. Vojak, R.L. Price and A. Griffin (November 2008). A Polanyian Perspective of Breakthrough Engineering Innovation. Workshop on Philosophy and Engineering (WPE-2008). London, England.
  9. A. Griffin, R.L. Price and B.A. Vojak (October 2008). More than Just Customer Needs: How Serial Innovators Develop a Deep Understanding of Business Customers’ Problems. Product Development and Management Association (PDMA) Research Forum. Anaheim, CA.
  10. A. Griffin, N. Hoffman, R.L. Price and B.A. Vojak (September 2007). How Serial Innovators Navigate the Fuzzy Front End of Innovation. Product Development and Management Association (PDMA) Research Conference. Orlando, FL.
  11. A. Griffin, N. Hoffman, R.L. Price and B.A. Vojak (June 2007). The Processes by Which Serial Innovators Innovate. European Institute for Advanced Studies in Management (EIASM) International Product Development Conference. Porto, Portugal.
  12. * B.A. Vojak and T.W. Osborn (May 2007). Technical and Product Visionaries and Serial Innovators: Repeatedly Creating and Delivering Breakthrough Innovations in Mature Organizations. 98th American Oil Chemists Society Annual Meeting. Quebec City, Quebec, Canada.
  13. E.W. Sim, A. Griffin, B.A. Vojak and R.L. Price (October 2006). Differences between Inventors, Champions, Implementers and Serial Innovators in Developing New Products in Large, Mature Firms. Product Development and Management Association (PDMA) Research Conference. Atlanta, GA.
  14. E.W. Sim, A. Griffin, B.A. Vojak and R.L. Price (June 2006). Differences between Inventors, Champions, Implementers and Serial Innovators in Developing New Products in Large, Mature Firms. European Institute for Advanced Studies in Management (EIASM) International Product Development Conference. Milan, Italy.
  15. A. Griffin, R.L. Price, M.M. Maloney, B.A. Vojak and E.W. Sim (February 2006). Voices from the Field: How Exceptional Electronic Industrial Innovators Innovate. American Marketing Association Winter Educators Conference. St. Petersburg, FL.
  16. A. Griffin, R.L. Price, M.M. Maloney, B.A. Vojak and E.W. Sim (October 2005). Voices from the Field: How Exceptional Electronic Industrial Innovators Innovate. Product Development and Management Association Research Conference. San Diego, CA.
  17. B.A. Vojak and T. Hatakeyama (September, 2006). A Comparison of American and Japanese Competitive Product Benchmarking and Reverse Engineering in the Electron Device Industry. Institute of Electrical and Electronics Engineers (IEEE) Annual International Engineering Management Conference. Salvador, Bahia, Brazil.
  18. A. Griffin, M. Marvel, J.M. Hebda and B.A. Vojak (July 2005). Studying Highly Valued Technical Professional Motivation Using a Corporate Entrepreneurship Framework: Voices from the Field. Enterprise Development Growth and Expansion (EDGE) Conference. Singapore.
  19. B.A. Vojak, C.A. Suarez, L. Peters and M. Sundararajan (September 2005). Sources of Information Used in Technology Planning within the Nanotechnology Industry. Institute of Electrical and Electronics Engineers (IEEE) Annual International Engineering Management Conference. St. John’s, Newfoundland, Canada.
  20. B.A. Vojak and C.A. Suarez (October 2004). Technology Planning ‘Bullwhip’ in the Electronics Industry Supply Chain. Institute of Electrical and Electronics Engineers (IEEE) Annual International Engineering Management Conference. Singapore.
  21. B.A. Vojak and N. Cihan (November 2003). The Propensity for Christensen-Type Disruptive Innovation in the Electron Device Industry. Institute of Electrical and Electronics Engineers (IEEE) Annual International Engineering Management Conference. Albany, NY.
  22. B.A. Vojak and W.W. Ho (May 2003). The Potential for Disruptive Technical Innovation in Wireless Communication Applications in the Frequency Control Industry. Joint Meeting of the Institute of Electrical and Electronics Engineers (IEEE) Frequency Control Symposium and the 17th European Frequency and Time Forum. Tampa, FL.
  23. B.A. Vojak and C.A. Suarez (August 2002). Sources of Information Used in New Product and Process Technology Planning within the Electron Device Industry. Institute of Electrical and Electronics Engineers (IEEE) Annual International Engineering Management Conference. Cambridge, England.
  24. B.A. Vojak, J.V. Carnahan and R.L. Price (June 2002). The Relative Contribution of Department Ranking to College Ranking in Engineering Graduate Program Rankings Conducted by U.S. News and World Report. American Society for Engineering Education (ASEE) Annual Conference. Montreal, Canada.
  25. M. Chandrasekhar, U. Venkateswaran, H.R. Chandrasekhar, B.A. Vojak, F.A. Chambers and J.M. Meese (August 1986). Shallow and Deep Donors Related to Indirect Conduction Bands in AlxGa1-xAs. 18th International Conference on the Physics of Semiconductors. Stockholm, Sweden.
  26. U. Venkateswaran, M. Chandrasekhar, H.R. Chandrasekhar, B.A. Vojak, F.A. Chambers and J.M. Meese (August 1986). Hydrostatic Pressure Study of GaAs-AlxGa1-xAs Quantum Wells at Low Temperatures. 18th International Conference on the Physics of Semiconductors. Stockholm, Sweden.
  27. A. Kangarlu, H.R. Chandrasekhar, M. Chandrasekhar, F.A. Chambers, B.A. Vojak and J.M. Meese (August 1986). Photoreflectance Spectroscopy of GaAs- AlxGa1-xAs Quantum Wells under Hydrostatic Pressure. 18th International Conference on the Physics of Semiconductors. Stockholm, Sweden.
  28. F.A. Chambers and B.A. Vojak (December 1986). Doping Effects in GaAs/AlGaAs Superlattices. Materials Research Society Fall Meeting. Boston, MA.
  29. W.D. Goodhue, T.C.L.G. Sollner, H. Le and B.A. Vojak (February 1986). Large Room Temperature Effects from Resonant Tunneling Through AlAs Barriers. Workshop on Compound Semiconductors for Microwave Materials and Devices (WOCSEMMAD). San Francisco, CA.
  30. M. Chandrasekhar, U. Venkateswaran, H.R. Chandrasekhar, B.A. Vojak, F.A. Chambers and J.M. Meese (March 1986). The Direct Exciton and Indirect Impurity Levels in AlxGa1-xAs Under Hydrostatic Pressure. March Meeting of the American Physical Society. Las Vegas, NV.
  31. U. Venkateswaran, M. Chandrasekhar, H.R. Chandrasekhar, B.A. Vojak, F.A. Chambers and J.M. Meese (March 1986). High Pressure Studies of GaAs- AlxGa1-xAs Quantum Wells: Well Width Dependence. March Meeting of the American Physical Society. Las Vegas, NV.
  32. G.W. Zajac, F.A. Chambers, P.E. Chumbley, J.M. Meese and B.A. Vojak (November 1985). The Influence of Gallium Ingot Cleaning Procedures on the Carbon Impurity Level in MBE GaAs. 32nd National Vacuum Symposium of American Vacuum Society. Houston, TX.
  33. F.A. Chambers, P.E. Chumbley, J.M. Meese, B.A. Vojak and G.W. Zajac (September 1985). Correlations of Photoluminescence and Electrical Measurements in Identifying Contaminants in MBE Grown GaAs. Annual Review of Materials Research Conference. Argonne, IL.
  34. U. Venkateswaran, M. Chandrasekhar, H.R. Chandrasekhar, B.A. Vojak, F.A. Chambers and J.M. Meese (September 1985). High Pressure Studies of GaAs-AlxGa1-xAs Quantum Well Structures. Annual Review of Materials Research Conference. Argonne, IL.
  35. F.A. Chambers, P.E. Chumbley, J.M. Meese and B.A. Vojak (April 1985). Correlation of Photoluminescence and Electrical Measurements in MBE Grown GaAs. Midwest MBE Users Group Meeting. St. Louis, MO.
  36. H.Q. Le, B. Lax, B.A. Vojak and A.R. Calawa (August 1984). A New Quantum State in (AlGa)As Multiple Quantum Well Structure. 17th International Conference on the Physics of Semiconductors. San Francisco, CA.
  37. * D.D. Rathman, B.A. Vojak, D.C. Flanders and N.P. Economou (September 1984). Silicon Permeable Base Transistors. 16th International Conference on Solid State Devices and Materials. Kobe, Japan.
  38. B.A. Vojak, J.P Salerno, A.R. Calawa and C.O. Bozler (February 1983). Transmission Electron Microscopy Characterization of GaAs Permeable Base Transistor Structures Grown by Molecular Beam Epitaxy and Vapor Phase Epitaxy. Workshop on Compound Semiconductors for Microwave Materials and Devices (WOCSEMMAD). San Antonio, TX.
  39. A.R. Calawa, B.A. Vojak, G.M. Metze, M.J. Manfra and W.D. Goodhue (October 1982). Lateral MBE Growth of GaAs over Tungsten. 4th Molecular Beam Epitaxy Workshop. Urbana, IL.
  40. G.D. Alley, C.O. Bozler, N.P. Economou, D.C. Flanders, M.W. Geis, G.A. Lincoln, W.T. Lindley, R.W. McClelland, R.A. Murphy, K.B. Nichols, W.J. Piacentini, S. Rabe, J.P. Salerno, and B.A. Vojak (June 1982). Millimeter-Wavelength GaAs Permeable Base Transistors. 40th Annual Device Research Conference. Fort Collins, CO.
  41. B.A. Vojak, K.B. Nichols, G.A. Lincoln, M.W. Geis, R.W. McClelland, D.C. Flanders and J.P. Salerno (February 1982). Fabrication of Surface Relief Structures for Permeable Base Transistors. Workshop on Compound Semiconductors for Microwave Materials and Devices (WOCSEMMAD). Scottsdale, AZ.
  42. G.A. Lincoln, M.W. Geis, L.J. Mahoney, A. Chu, B.A. Vojak, K.B. Nichols, W.J. Piacentini, N. Efremow and W.T. Lindley (November 1981). Ion Beam Assisted Etching for GaAs Device Applications. American Vacuum Society Meeting. Los Angeles, CA.
  43. E.R. Anderson, B.A. Vojak, N. Holonyak, Jr., G.E. Stillman, J.J. Coleman and P.D. Dapkus (June 1981). Transient and Noise Characteristics of Quantum-Well Heterostructure Lasers. Conference on Lasers and Electro-Optics. Washington, D.C.
  44. E.A. Rezek, B.A. Vojak, R. Chin, N. Holonyak, Jr. and E.A. Sammann (June 1980). Thin-Layer Liquid Phase Epitaxy of InGaPAs Heterostructures in Short Intervals (< 100 ms): Non-Diffusion-Limited Crystal Growth. Materials Research Conference. Ithaca, NY.
  45. N. Holonyak, Jr., B.A. Vojak, W.D. Laidig, K. Hess, J.J. Coleman and P.D. Dapkus (June 1980). Phonon Contribution to Quantum-Well and to Double-Heterostructure Laser Operation. 38th Annual Device Research Conference. Ithaca, NY.
  46. N. Holonyak, Jr., R.M. Kolbas, W.D. Laidig, B.A. Vojak, R.D. Dupuis and P.D. Dapkus (June 1979). Phonon-Assisted Recombination in Quantum-Well MO-CVD AlxGa1-xAs -GaAs Heterostructure Lasers. 37th Annual Device Research Conference. Boulder, CO.
  47. N. Holonyak, Jr., R.M. Kolbas, W. Laidig, B.A. Vojak, R.D. Dupuis and P.D. Dapkus (September 1978). MOCVD Quantum-Well AlxGa1-xAs-GaAs Heterostructure Lasers. 7th International Symposium on GaAs and Related Compounds. St. Louis, MO.
  48. E.A. Rezek, N. Holonyak, Jr., B.A. Vojak, G.E. Stillman, J.A. Rossi, D.L. Keune and J.D. Fairing (June 1977). Liquid Phase Epitaxial InGaPAs Multilayered Heterojunction Lasers Exhibiting ‘Quantum Size Effects. 35th Annual Device Research Conference. Ithaca, NY.